Type Designator: IRF4905
Type of Transistor: MOSFET
IRF4905 Datasheet, IRF4905 PDF, IRF4905 Data sheet, IRF4905 manual, IRF4905 pdf, IRF4905, datenblatt, Electronics IRF4905, alldatasheet, free, datasheet, Datasheets. The IRF4905 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 64 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 120 nC
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: TO220AB
IRF4905 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
Irf4905 Mosfet Circuit
IRF4905 Datasheet (PDF)
0.1. irf4905lpbf irf4905spbf.pdf Size:361K _international_rectifier
PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper
0.2. irf4905pbf.pdf Size:181K _international_rectifier
PD - 94816IRF4905PbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.02G P-Channel Fully Avalanche RatedID = -74A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre
Irf4905 Mosfet Motor
0.3. irf4905s.pdf Size:163K _international_rectifier
PD - 9.1478AIRF4905S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF4905S)VDSS = -55V Low-profile through-hole (IRF4905L) 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve
0.4. irf4905.pdf Size:108K _international_rectifier
PD - 9.1280CIRF4905HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-
Irf4905 Mosfet
0.5. irf4905.pdf Size:241K _inchange_semiconductor
isc P-Channel MOSFET Transistor IRF4905,IIRF4905FEATURESStatic drain-source on-resistance:RDS(on)0.02Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliab
Irf4905 Mosfet Pinout
Datasheet: IRF3710S, IRF430, IRF440, IRF450, IRF451, IRF452, IRF453, IRF460, 2N5485, IRF4905L, IRF4905S, IRF510, IRF510A, IRF510S, IRF511, IRF512, IRF513.
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Irf4905 Mosfet Switch
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Transistor Mosfet Irf4905